ECE 103 Fundamentals of Devices and Materials
Winter Quarter, Jan 6 – Mar 21, 2015
University of California San Diego
Department of Electrical and Computer Engineering
Instructor: Prof. Shadi Dayeh
Office: Jacobs Hall (EBU1), Room 4803
Tel.: (858) 534-5171; Fax: (858) 534-0556; e-mail: firstname.lastname@example.org
Office Hours: Monday 2:00 - 3:00 pm; Friday 2:00 - 3:00 pm or by appointment/drop in.
Lectures: Tuesday, Thursday, 3:00 - 4:50 pm Center Hall, Room 215.
Discussion Session: Monday, 5:00-5:50pm and 6:00-6:50pm Cognitive Science Building (CSB), Room 002.
Discussion Sessions: M 5:00 – 5:50 pm, CSB 002
Office Hours: Tu/Th 2:00-3:00pm. EBU1, Room (EBU1-4506).
- Rui La, e-mail: email@example.com
Discussion Sessions: W 4:00 – 4:50 pm, CSB 002
Office Hours: Th 5:00-6:00pm, EBU1, Room (EBU1-4506).
- 01/06/2015: Welcome to ECE103! Please check this website regularly for announcements and class related handouts.
- 01/06/2015: In today’s lecture, we went over the course syllabus and introduced the concepts of energy bands in solids and energy momentum diagrams. This material is for your background and there are derivations that you are not responsible about (marked as ‘Not Required’ in slide title).
- 01/08/2015: In today’s lecture, we went over the Czochralski ingot growth and thin film growth techniques and started the first topic of this class “Semiconductor Crystal Structure”. We classified semiconductors according to their composition and structure. We then went over examples of basic crystal structures such as simple cubic, body centered cubic, face centered cubic and Diamond/Zinc Blende. We will continue next lecture into Miller indices of planes and directions.
- 01/13/2015: In today’s lecture, we went over Miller indices of crystal planes and crystal directions and then started the topic of carrier modeling and statistics by introducing the concepts of electrons and holes, E-k diagrams, and particle effective mass.
- 01/13/2015: Homework #1 is posted online in the homework section below and is due on
Tues, Jan. 20th Thurs Jan. 22nd at the beginning of class.
- 01/15/2015: In today’s lecture, we went over the density of states, the Fermi function, the equations for calculating the carrier densities for electrons and holes and intrinsic carrier density in semiconductors and discussed the change in the carrier densities with the energy difference (Ec-EF) and (EF-Ev), and obtained an equation for the location of the intrinsic Fermi energy, Ei, in the bandgap.
- 01/20/2015: In today’s lecture, we overviewed the carrier statistics from last time and went over the concept of Donors and Acceptors, the free carrier densities for electrons and holes related to the dopant densities, and the resulting location of the Fermi energy. This is capitalized on with the charge neutrality condition which allows us to calculate the free carrier densities for compensated semiconductors.
- 01/20/2015: Homework#2 is posted online in the homework section below and is due on 01/27/2015 at the beginning of class.
- 01/22/2015: In today’s lecture, we went over drift velocity, velocity-field relationships in Si and GaAs, drift current, and energy band diagrams and introduced diffusion current.
- 01/27/2015: In today’s lecture, we went over carrier diffusion currents, Einstein relationship, recombination generation processes, recombination-generation rates, time-dependent minority carrier concentration, and continuity equations. These are the topics included in Quiz#1 on next Thursday Jan. 29th. Next lecture, we review the continuity equation and provide an example.
- 01/27/2015: Homework#2 solutions is uploaded in the homework section.
- 01/27/2015: A sample quiz is uploaded in the handout section.
- 02/03/2015: In today’s lecture, we went over junction formation and the basic electrostatics of p-n junctions to calculate the electric field, potential, and depletion width.
- 02/03/2015: Homework#3 is posted online in the homework section below and is due on 02/10/2015 at the beginning of class.
- 02/03/2015: Quiz#1 solutions are posted in the handouts section.
- 02/03/2015: Rui La’s discussion session notes are posted in the handouts section.
- 02/05/2015: In today’s lecture, we went over biasing a p-n junction, band-diagrams, minority carrier distribution, origin of current, and derivation of the diode current equations.
- 02/05/2015: Sample midterm from Fall 2013 is uploaded in the handouts section.
- 02/09/2015: The sample midterm solutions have been uploaded as is Lecture 11 notes.
- 02/10/2015: Homework # 4 is handed out and will be due next Tuesday, Feb. 17th. Homework #3 solutions are uploaded below.
- 02/10/2015: In today’s lecture, we reviewed our pn junction discussions thus far and discussed non-ideal junction behavior such as break-down characteristics (Avalanche and Zener), recombination in the depletion region, high level injection, and series resistance. We then discussed the short-base diode, and p-n junction CV characteristics. The equations for the narrow base diode have been corrected in the updated Lecture11 Notes.
- 02/10/2015: I will have an extra office hour tomorrow Wednesday 2-3 pm in my 4803 office.
- 02/17/2015: In today’s lecture, we went over the midterm solutions (see Lecture12-13PPT) and started discussing transistor action in bipolar junction transistors, and what constitutes common-base DC current gain, emitter efficiency, and base transport factor.
- 02/17/2015: I’ve uploaded to the handouts section some practice problems on diodes, continuity equation, energy-band diagrams coupled to drift-diffusion currents. I have also uploaded a past homework problem set and its solutions which should serve as a general review for some of the concepts we went over in this class so far.
- 02/17/2015: Homework # 5 is handed out and will be due next Tuesday, Feb. 24th. Homework #4 solutions will be uploaded on Thursday, Feb. 19th.
- 02/24/2015: In today’s lecture, we finished our discussion on the common-base and common-emitter IV characteristics based on minority carrier concentration profiles in BJT base. We started discussion of MOS capacitors and their different biasing regimes.
- 02/24/2015: Quiz#2 will be taken on 03/03/2015. It will cover BJT’s and pn junctions.
- 02/26/2015: In today’s lecture, we reviewed energy band-edge diagrams for MOS capacitors and went over different gate biasing regimes, the surface potential, oxide electric field, and depletion width in the semiconductor and derived the threshold voltage.
- 03/03/2015: A sample final and its solution have been uploaded to the handouts section. Homework#6 has been uploaded to the Homework section and will be due on Tuesday March 10th at the beginning of the lecture.
- 03/03/2015: ECE103 Final will be taken on Thursday March 12th 7:00 – 9:59 pm in Center Hall, room 113.
- 03/03/2015: In today’s lecture, we overviewed the threshold voltage calculation and then went over the capacitance voltage characteristics for MOS capacitors. We started discussion of the non-ideal MOS and the flat-band voltage.
- 03/05/2015: In today’s lecture, we reviewed the ideal and non-ideal MOS, and discussed the flat-band voltage for the cases of metal-semiconductor workfunction difference and for oxide charges. We then discussed MOSFET operation and current-voltage characteristics, channel conductance and transistor transconductance. This lecture concludes the required material for ECE103. We will provide an overview of all the topics we went over thus far in our upcoming lecture on Tuesday March 10th.
- 03/010/2015: In today’s lecture, we reviewed the class material as shown in the ppt file in the handouts section.
· Lecture Notes:
- Schottky contacts/MESFET Introduction (not required)
· Problem Sets and Solutions:
© Shadi Dayeh, 2015 Last update: 03/10/2015 6:45 pm