**ECE**** 135B Electronic Devices**

**Winter Quarter, January 3 – March 24, 2018**

**University of California San Diego**

**Department of Electrical and Computer Engineering**

**Instructor: **Prof. Shadi Dayeh

Office: Jacobs Hall (EBU1), Room 3609

Tel.: (858) 534-5171; Fax: (858) 534-0556; e-mail: sdayeh@ucsd.edu

Office Hours: Wednesday 2:00 pm - 3:00 pm and by appointment.

**Lectures:** Tuesday, Thursday 11:00 am - 12:20 pm WLH, Room 4050B.

_ **Announcements:**

- So far, we've missed two classes, one on 1/11 because I got the flu, and one on 1/18 because I needed to be in DC to serve on a review panel. We've covered in great details the surface processes in making contacts to semiconductors and their barrier height. In the posted notes (Lecture 1.2) and the extra hand notes, the derivation of the current was not done in class. We will go over the derivation of the current.

- 01/23/18: In today's lecture, we went over examples of making metal alloy contacts to semiconductor channels and issues that arise in making alloy contacts to nanoscale channels. We then went over the current flow in metal-semiconductor contacts and introduced the ideality factor to account for non-ideal effects such as recombination in depletion region, contact interface, or the surface of the device as well as in defect in the device itself. Then we discussed the tunneling current and the contact resistance and how to extract it from the transmission-line measurement technique.

- 01/25/18: In today's lecture, we overviewed the derivation of the continuity equation and Gauss's law. We analyzed absorption in 'dielectrics' from an electromagnetic point of view. We went over a qualitative understanding and quantitative description of the Air Mass and described the solar spectrum. We then went over absorption in semiconductors involving direct and indirect transitions in direct and indirect bandgap semiconductors. We then went over Generation and internal quantum efficiency.

- 01/30/18: In today's lecture,we went over recombination mechanisms in semiconductors and discussed the basic principles for solar cell design. We then derived the minority carrier currents for a simple example where uniform generation rate is assumed throughout the semiconductor.

- 02/1/18: In today's lecture, we continued the analysis of the simple solar cell subject of homework 2 problem 1, and showed how the light and dark J-V characteristics will look like. We then analyzed the real cell situation where surface recombination, wavelength and depth dependent absorption prevail. We reduced the solar cell model to a 2-diode large signal model.

- 02/6/18: In today's lecture, we reviewed the solar cell large signal model and discussed the solar cell performance figures of merit including maximum power, fill factor, power conversion efficiency, quantum and external quantum efficiency. We also discussed the effects of series and shunt parasitic resistances on the cell performance and provided an introduction to multi-junction solar cells.

- 02/8/18: In today's lecture, we discussed an introduction to metal-insulator-semiconductor capacitors, treated the ideal case in terms of charge density distribution, electric field, potential and band diagrams, and defined the potentials and the surface potential relative to that obtained from the intrinsic Fermi level.

- 02/15/18: In today's lecture, we went over the ideal MIS C-V characteristics and regional approximations, the capacitance small signal model and how to extract the interface trap density at high-f/Terman method.

- 03/1/2018: In today's lecture, we reviewed the gradual channel approximation and derived the MOSFET current equation in the charge sheet model and made regional approximations in the linear/triode, parabolic, and saturation regimes and discussed the body factor, m.

- 03/1/2018: Midterm will take place in class on Tuesday 5/6 at 11am. You are required to bring a bluebook, and you are allowed a calculator, a pen/pencil, and one page of cheat sheet.

- 03/13/2018: Today, we went over body effect on threshold voltage and then discussed short-channel effects and worked out particularly solutions for the current equations for the velocity-saturation model.

_ **Lecture Notes:**

- 01/9/2018: Lecture1.1

- 01/16/2018: Lecture1.2 (extra hand notes)

- 01/23/2018: Lecture1.3 (extra hand notes)

- 01/25/2018: Lecture2.1 (extra hand notes; E&M Review/Absorption)

- 01/28/2018: (extra hand notes)

- 02/1/2018: Lecture2.3 (extra hand notes)

- 02/6/2018: (extra hand notes)

- 02/8/2018: Lecture3.1 (extra hand notes)

- 02/13/2018: Lecture3.2 (extra hand notes)

- 02/15/2018: Lecture3.3 (extra hand notes)

- 02/27/2018: Lecture3.4

- 03/1/2018: Lecture4.1 (extra hand notes)

- 03/1/2018: Lecture4.2 (extra hand notes)

- 03/7/2018: Silvaco/Atlas Tutorial Diode Example 1 Diode Example 2

- 03/8/2018: Lecture4.3 (extra hand notes)

- 03/13/2018: Lecture4.4 (extra hand notes)

_ **Handouts:**

** **

- 01/9/2018: Chapter 3 of Handbook of Photovoltaic Science and Engineering, The Physics of the Solar Cell

- 01/9/2018: Absorption in Si (for Homework # 2)

- 01/9/2018: Midterm-sample Midterm-sample Solution

- 01/9/2018: ECE103 Lecture Notes

- 01/9/2018: Final-Exam-sample Final-Exam-sample-Solutions

- 01/9/2018: Midterm Midterm Solutions

_ **Problem Sets and Solutions:**

- 01/28/2018: Homework #1 Homework #1 Solution

- 02/6/2018: Homework #2 Homework #2 Solution

- 02/13/2018: Homework #3 Homework #3 Solution

- 03/8/2018: Homework #4

© Shadi Dayeh, 2018 Last update: 03/13/2018 7:35 pm.