IEBL Report - Detail view

Identifier 26
Journal Applied Physics Letters
Author(s): Son T. Le, P. Jannaty, A. Zaslavsky, S. A. Dayeh, S. T. Picraux
Title Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires
Pages 262102
Volume 96
doi doi: 10.1063/1.3457862
BibTeX:

@article{iebl_2010_26,
  title = "{Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires}",
  author = "{Son T. Le, P. Jannaty, A. Zaslavsky, S. A. Dayeh, S. T. Picraux}",
  journal = "{Applied Physics Letters}",
  volume = "{96}",
  number = "{26}",
  year = "{2010}",
}

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