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<p>Prof. Dayeh will present IEBL's progress in two distinct areas at the upcoming Electrochemical Society Prime 2016 Meeting in Honolulu on Oct. 4th. 15:30 1975 (Invited) Strain Engineered Crack-Free GaN on Si for Integrated Vertical High Power GaN Devices with Si CMOS S. Dayeh, A. Tanaka, W. Choi, and R. Chen (UC San Diego) @ 320 (Hawai'i Convention Center) 16:40 2210 (Invited) High Density Individually Addressable Nanowire Arrays for Intracellular Mapping of Neuronal Activity S. Dayeh (UC San Diego) @ 308 B (Hawai'i Convention Center)</p>