Aug 21, 2017
Congratulations to Atsunori Tanaka and team for publishing a paper that demonstrated for the first time the growth of thick (20 microns) crack-free GaN-on-Si in Advanced Materials. This is accompanied with the lowest ever achieved dislocation density of 1E7/cm2 of GaN-on-Si and the first vertical MISFET on Si. 
Jun 9, 2017
Renjie Chen publishes three articles on compound contacts to InGaAs (1 Nano Letters, 1 Small), and Ge/Si (Appl. Phys. Lett.). Congrats Renjie! Watch Renjie explain his work here: News release about Renjie's work by Shannon Prior: 

About us

We are a young, multidisciplinary, and dedicated research group with strong scientific and technical foundations reducing to practice innovative solutions for the most pressing problems in energy- and health-relevant electronic materials. Our research covers studies in electronic and biointerface materials and devices from atomic and molecular scale processes to fully functional systems.

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  • Integrated Electronics Laboratory / Main Office
    Jacobs Hall, Room 1315
    (858) 534 - 6940
    Safety Coordinator: Atsunori Tanaka
  • Neural Interfaces Laboratory
    Jacobs Hall, Room 1504
    (858) 822 - 1646
    Safety Coordinator: Sang Heon Lee
  • GaN MOCVD Laboratory
    Atkinson Hall/Calit2, Room 1422
    (858) 822 - 7946
    Safety Coordinator: Atsunori Tanaka
  • Arsenide/Phosphide MOCVD Laboratory
    Jacobs Hall, Room 1335
    Safety Coordinator: Yun Goo Ro
  • Characterization Laboratory
    Jacobs Hall, Room 1313
    Safety Coordinator: Yun Goo Ro