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Thick crack free GaN-on-Si for vertical high power devices

Our research is at the interface of device physics and materials science and aims to address both fundamental and applied science problems. We are deeply interested in the discovery of new physics, materials science and new levels of performance made possible by combining dissimilar materials using heteroepitaxial growth of III-V compound semiconductors and SiGe material systems. This opens up a new parameter space for realizing both cost- and energy-efficient electronic devices and optoelectronic devices. Accompanied with advanced nanoscale device fabrication and characterization, a significant portion of our research explores atomic scale processes (solid-state reactions, defect nucleation and propagation, and charge transport processes) in semiconductor materials. The advanced monolithic and hybrid integration schemes our group masters in solid-state devices are currently being applied for solving critical problems in electro-physiological interfaces, where we are developing bio-compatible nanoscale capacitive probes for high resolution sensing from neural tissue. We have strong ties to the Center for Integrated Nanotechnologies (CINT) at Sandia/Los Alamos, and have other ongoing national and international collaborations.