Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires

Authors
Son T. Le, P. Jannaty, A. Zaslavsky, S. A. Dayeh, S. T. Picraux
doi
10.1063/1.3457862
Identifier
26
Volume
96
Pages
262102
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BibTeX
@article{iebl_2010_26,
title = "{Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires}",
author = "{Son T. Le, P. Jannaty, A. Zaslavsky, S. A. Dayeh, S. T. Picraux}",
journal = "{Applied Physics Letters}",
volume = "{96}",
number = "{26}",
year = "{2010}",
}
Publication Year
2010
Publication Type
Journal Articles
Journal
Applied Physics Letters