Atsunori Tanaka publishes a paper on 20um thick crack-free GaN-on-Si in Advanced Materials

<p>Congratulations to Atsunori Tanaka and team for publishing a paper that demonstrated for the first time the growth of thick (20 microns) crack-free GaN-on-Si in Advanced Materials. This is accompanied with the lowest ever achieved dislocation density of 1E7/cm2 of GaN-on-Si and the first vertical MISFET on Si.&nbsp;</p>