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<p>Advanced Functional Materials publishes Daisy's article, which sets the first report on InGaAs FinFETs on Si substrates through a novel heterointegration process. This work is the result of a collaboration led by Prof. Dayeh between UC San Diego and Nanyang Technological University (<a href="http://iebl.ucsd.edu/news/www1.spms.ntu.edu.sg/~oson/">Prof. Cesare Soci's group</a>).</p>